Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BF966SA Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. BF966SA
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF966SA Datasheet(HTML) 1 Page - Vishay Siliconix

  BF966SA Datasheet HTML 1Page - Vishay Siliconix BF966SA Datasheet HTML 2Page - Vishay Siliconix BF966SA Datasheet HTML 3Page - Vishay Siliconix BF966SA Datasheet HTML 4Page - Vishay Siliconix BF966SA Datasheet HTML 5Page - Vishay Siliconix BF966SA Datasheet HTML 6Page - Vishay Siliconix BF966SA Datasheet HTML 7Page - Vishay Siliconix BF966SA Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
BF966S
Document Number 85004
Rev. 1.5, 15-Apr-05
Vishay Semiconductors
www.vishay.com
1
13625
1
4
3
2
G2
G1
D
S
Electrostatic sensitive device.
Observe precautions for handling.
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
• Low noise figure
• High AGC-range
• Low feedback capacitance
• Low input capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Input- and mixer stages especially UHF-tuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF966S
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35
µm Cu
Part
Ordering Ccode
Marking
Package
BF966S
BF966SA or BF966SB
BF966S
TO50
BF966SA
BF966SA
BF966S
TO50
BF966SB
BF966SB
BF966S
TO50
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
20
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
e3


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn