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LP2998MRX Datasheet(PDF) 16 Page - Texas Instruments

Part # LP2998MRX
Description  LP2998 DDR-I and DDR-II Termination Regulator
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
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LP2998MRX Datasheet(HTML) 16 Page - Texas Instruments

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VTT
LP2998
PVIN
VDDQ
VREF
AVIN
VREF = 1.25V
VSENSE
GND
47 PF
+
+
+
VDDQ = 2.5V
VDD = 2.5V
VTT = 1.25V
330 PF
SD
SD
+
330 PF
0.01 PF
VTT
LP2998
PVIN
VDDQ
VREF
AVIN
VSENSE
GND
+
+
+
SD
SD
CIN
COUT
CREF
AVIN = 2.5V
VDDQ = 1.8V
VTT = 0.9V
VREF = 0.9V
LP2998
SNVS521I – DECEMBER 2007 – REVISED APRIL 2013
www.ti.com
OUTPUT CAPACITOR SELECTION
For applications utilizing the LP2998 to terminate SSTL-2 I/O signals the typical application circuit shown in
Figure 27 can be implemented.
Figure 27. Typical SSTL-2 Application Circuit
This circuit permits termination in a minimum amount of board space and component count. Capacitor selection
can be varied depending on the number of lines terminated and the maximum load transient. However, with
motherboards and other applications where VTT is distributed across a long plane, it is recommended to use
multiple bulk capacitors in addition to high frequency decoupling. Figure 28 depicts an example circuit where 2
bulk output capacitors could be situated at both ends of the VTT plane for optimal placement. Large aluminum
electrolytic capacitors are typically used for their low ESR and low cost.
Figure 28. Typical SSTL-2 Application Circuit for Motherboards
In most PC applications, an extensive amount of decoupling is required because of the long interconnects
encountered with the DDR-SDRAM DIMMs mounted on modules. As a result, bulk aluminum electrolytic
capacitors in the range of 1000uF are typically used.
PCB Layout Considerations
1. The input capacitor for the power rail should be placed as close as possible to the PVIN pin.
2. VSENSE should be connected to the VTT termination bus at the point where regulation is required. For
motherboard applications an ideal location would be at the center of the termination bus.
3. VDDQ can be connected remotely to the VDDQ rail input at either the DIMM or the Chipset. This provides the
most accurate point for creating the reference voltage.
4. For improved thermal performance excessive top side copper should be used to dissipate heat from the
package. Numerous vias from the ground connection to the internal ground plane will help. Additionally these
can be located underneath the package if manufacturing standards permit.
5. Care should be taken when routing the VSENSE trace to avoid noise pickup from switching I/O signals. A
0.1uF ceramic capacitor located close to the SENSE can also be used to filter any unwanted high frequency
signal. This can be an issue especially if long SENSE traces are used.
6. VREF should be bypassed with a 0.01 µF or 0.1 µF ceramic capacitor for improved performance. This
capacitor should be located as close as possible to the VREF pin.
16
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LP2998


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