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FODM124 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FODM124 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODMXXX Rev. 1.1.4 2 Absolute Maximum Ratings (T A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Electrical Characteristics (T A = 25°C) Individual Component Characteristics Symbol Parameter Value Units TOTAL PACKAGE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +110 °C EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1µs pulse, 300 pps.) 1 A VR Reverse Input Voltage 6 V PD Power Dissipation 70 mW Derate linearly (above 25°C) 0.65 mW/°C DETECTOR Continuous Collector Current 80 mA PD Power Dissipation 150 mW Derate linearly (above 25°C) 2.0 mW/°C VCEO Collector-Emitter Voltage FODM2701, FODM2705 40 V FODM121 Series, FODM124 80 VECO Emitter-Collector Voltage 7 V Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER VF Forward Voltage IF = 10mA FODM121 Series, FODM124 1.0 1.3 V IF = 5mA FODM2701 1.4 IF = ±5mA FODM2705 IR Reverse Current VR = 5V FODM2701 5 µA FODM121 Series FODM124 DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1mA, IF = 0 FODM121 Series, FODM124 80 V FODM2701, FODM2705 40 BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 V ICEO Collector Dark Current VCE = 40V, IF = 0 All 100 nA CCE Capacitance VCE = 0V, f = 1MHz All 10 pF |
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