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FQD5P20 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQD5P20 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page FQD5P20 / FQU5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD5P20 / FQU5P20 Units VDSS Drain-Source Voltage -200 V ID Drain Current - Continuous (TC = 25°C) -3.7 A - Continuous (TC = 100°C) -2.34 A IDM Drain Current - Pulsed (Note 1) -14.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 330 mJ IAR Avalanche Current (Note 1) -3.7 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 45 W - Derate above 25°C 0.36 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.78 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) I-PAK FQU Series D-PAK FQD Series G S D G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G October 2008 QFET ® • RoHS Compliant ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 |
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