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BQ2018 Datasheet(PDF) 12 Page - Texas Instruments

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Part No. BQ2018
Description  Power Minder IC
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ2018 Datasheet(HTML) 12 Page - Texas Instruments

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12
Absolute Maximum Ratings
Symbol
Parameter
Minimum
Maximum
Uni
t
Notes
VCC
Relative to VSS
-0.3
+6.0
V
HDQ
Relative to VSS
-0.3
+6.0
V
All other pins
VSS -0.3V
VCC +3.0V
V
IREG
REG to VSS
1.0
mA
VSR1 / VSR2
Relative to VSS
-0.3
+6.0
V
A 100k
Ω series resistor is
recommended to protect SR1 / SR2
in case of a shorted battery.
TOPR
Operating
temperature
- 20
+70
°C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Electrical Characteristics (T
A =TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
VCC
Supply voltage
2.8
4.25
5.5
V
REG = No connect
3.5
3.7
3.9
V
VCC derived from REG, Note 3
ICC
Operating current
-60
70
µAVCC,HDQ = 3.7V
-70
80
µAVCC,HDQ = 5.5V
ICC2
Sleep
-
-
10
µAVCC = 5.5V
IRBI
RBI current
-
-
100
nA
VCC < 2.4V
VSR
Sense resistor input
-200
-
200
mV
VSR1 <VSR2 = discharge;
VSR1 > VSR2 = charge
Note 2
RSR
SR1 / SR2 input impedance
10
-
-
M
-200mV < VSR < 200mV
IOL
Open-drain sink current
-
-
2.0
mA
VOL =VSS + 0.3V
WAKE, HDQ
VIHDQ
HDQ input high
2.5
-
-
V
VILDQ
HDQ input low
-
-
0.8
V
Notes:
1.
All voltages relative to VSS.
2.
VSR1/SR2 +VOS.VOS is affected by PC board layout. Follow proper layout guidelines for optimal
performance.
3.
Can be guaranteed by design when using an SST108 or equivalent JFET.
bq2018


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