MTB8N50E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

—

—

500

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0 Vdc)

(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

mAdc

Gate–Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.0

6.3

4.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 4.0 Adc)

RDS(on)

—

0.6

0.8

Ohms

Drain–to–Source On–Voltage (VGS = 10 Vdc)

(ID = 8.0 Adc)

(ID = 4.0 Adc, TJ = 125°C)

VDS(on)

—

—

—

—

7.2

6.4

Vdc

Forward Transconductance

(VDS = 15 Vdc, ID = 4.0 Adc)

gFS

4.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

1450

1680

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

190

264

Transfer Capacitance

f = 1.0 MHz)

Crss

—

45.4

144

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(R

9 1

W)

td(on)

—

15

50

ns

Rise Time

(RGon =91 W)

tr

—

33

72

Turn–Off Delay Time

(RGon = 9.1 W)

td(off)

—

40

150

Fall Time

tf

—

32

60

Gate Charge

(see Figure 8)

(V

400 Vd

I

8 0 Ad

QT

—

40

64

nC

(see Figure 8)

(VDS = 400 Vdc, ID = 8.0 Adc,

Q1

—

8.0

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

17

—

Q3

—

17.3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

VSD

Vdc

(IS = 8.0 Adc, VGS = 0 Vdc)

—

1.2

2.0

(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C)

—

1.1

—

Reverse Recovery Time

(I

8 0 Ad

V

0 Vd

trr

—

320

—

ns

(IS = 8.0 Adc, VGS = 0 Vdc,

ta

—

179

—

( S

,

GS

,

dIS/dt = 100 A/ms)

tb

—

141

—

Reverse Recovery Stored Charge

QRR

—

3.0

—

mC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

(1) Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

(2) Switching characteristics are independent of operating junction temperature.