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TUI--9 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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TUI--9 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 19 page MRF6VP2600HR6 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD =50 Volts,IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain — 25 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth • Typical Pulsed Performance: VDD =50 Volts,IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 25.3 dB Drain Efficiency — 59% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20% Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, IDQ = 2600 mA Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ = 150 mA Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ = 150 mA RθJC 0.20 0.14 0.16 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF6VP2600H Rev. 5.1, 7/2010 Freescale Semiconductor Technical Data MRF6VP2600HR6 2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET CASE 375D--05, STYLE 1 NI--1230 PART IS PUSH--PULL Figure 1. Pin Connections (Top View) RFoutA/VDSA 31 42 RFoutB/VDSB RFinA/VGSA RFinB/VGSB © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. |
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