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CopperFoil Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc |
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CopperFoil Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc |
5 / 19 page MRF6VP2600HR6 5 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD Gps VDD =50 Vdc,IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% 50 1 1000 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage 30 Ciss 100 10 40 Coss Crss Measured with ±30 mV(rms)ac @ 1 MHz VGS =0 Vdc 1 100 110 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 5. DC Safe Operating Area 100 26.5 10 0 80 100 25.5 24.5 23.5 70 60 50 40 30 Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power 25 24 22.5 1000 20 52 64 27 62 Pin, INPUT POWER (dBm) Figure 7. Pulsed CW Output Power versus Input Power 60 38 26 58 31 32 33 34 35 36 37 P3dB = 59.7 dBm (938 W) Actual Ideal P2dB = 59.1 dBm (827 W) 21 26 0 25 24 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power 100 23 600 700 Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power Pout, OUTPUT POWER (WATTS) PULSED 21 28 10 25 27 26 100 1000 VDD =50 Vdc,IDQ = 2600 mA, f = 225 MHz Pulse Width = 12 μsec, Duty Cycle = 1% VDD =50 Vdc IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% 56 54 29 30 28 P1dB = 53.3 dBm (670 W) 22 200 300 400 500 VDD =30 V 35 V 40 V 45 V 50 V ηD 25_C TC =--30_C 85_C Gps 22 24 23 VDD =50 Vdc,IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% TC =25_C TJ = 150_C TJ = 175_C 10 80 50 70 60 20 40 30 23 10 Note: Each side of device measured separately. Note: Each side of device measured separately. TJ = 200_C |
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