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TL431AILPG Datasheet(PDF) 2 Page - ON Semiconductor |
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TL431AILPG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 18 page TL431, A, B Series, NCV431A, B http://onsemi.com 2 Representative Block Diagram 1.0 k Cathode (K) 2.5 Vref Anode (A) Reference (R) 4.0 k 150 Symbol 10 k 20 pF 800 Cathode (K) 3.28 k Representative Schematic Diagram Component values are nominal Anode (A) - + Anode (A) 800 Reference (R) 2.4 k 7.2 k 20 pF 800 Cathode (K) Reference (R) This device contains 12 active transistors. MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.) Rating Symbol Value Unit Cathode to Anode Voltage VKA 37 V Cathode Current Range, Continuous IK −100 to +150 mA Reference Input Current Range, Continuous Iref −0.05 to +10 mA Operating Junction Temperature TJ 150 °C Operating Ambient Temperature Range TA °C TL431I, TL431AI, TL431BI −40 to +85 TL431C, TL431AC, TL431BC 0 to +70 NCV431AI, NCV431B, TL431BV −40 to +125 Storage Temperature Range Tstg −65 to +150 °C Total Power Dissipation @ TA = 25°C PD W Derate above 25°C Ambient Temperature D, LP Suffix Plastic Package 0.70 P Suffix Plastic Package 1.10 DM Suffix Plastic Package 0.52 Total Power Dissipation @ TC = 25°C PD W Derate above 25°C Case Temperature D, LP Suffix Plastic Package 1.5 P Suffix Plastic Package 3.0 ESD Rating HBM MM >2000 >200 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Condition Symbol Min Max Unit Cathode to Anode Voltage VKA Vref 36 V Cathode Current IK 1.0 100 mA THERMAL CHARACTERISTICS Characteristic Symbol D, LP Suffix Package P Suffix Package DM Suffix Package Unit Thermal Resistance, Junction−to−Ambient RqJA 178 114 240 °C/W Thermal Resistance, Junction−to−Case RqJC 83 41 − °C/W |
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