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PN4250 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. PN4250
Description  PNP General Purpose Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

PN4250 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 5.0 mA, IB = 0
40
V
V(BR)CES
Collector-Emitter Breakdown
Voltage*
IC = 10
µA, I
B = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
µA, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
µA, I
C = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 40 V, IE = 0
10
nA
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
20
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 100
µA
250
700
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
0.25
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 1.0 MHz
6.0
pF
hie
Input Impedance
VCE = 5.0 V, IC = 1.0 mA,
6.0
20
k
hoe
Output Admittance
f = 1.0 kHz
5.0
50
µmhos
hre
Voltage Feedback Ratio
10
x10
-4
NF
Noise Figure
VCE = 5.0 V, IC = 250
µA,
RS = 1.0 k
Ω, f = 1.0 kHz,
BW = 150 Hz
VCE = 5.0 V, IC = 20
µA,
RS = 10 k
Ω, f = 1.0 kHz,
BW = 150 Hz
2.0
2.0
dB
dB
*Pulse Test: Pulse Width≤ 300µs, Duty Cycle≤ 2.0%


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