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PN2222A Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. PN2222A
Description  NPN General Purpose Amplifier
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

PN2222A Datasheet(HTML) 3 Page - Fairchild Semiconductor

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Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2222A
*PZT2222A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT2222A
MMPQ2222
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
°C/W
°C/W
Typical Characteristics
NPN General Purpose Amplifier
(continued)
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
C
β = 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
110
100
500
0.1
0.2
0.3
0.4
I
- COLLECTOR CURRENT (mA)
25 °C
C
β = 10
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
C
125 °C
25 °C
- 40 °C
V
= 5V
CE


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