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FDB86135 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDB86135
Description  N-Channel Shielded Gate PowerTrench짰 MOSFET
Download  9 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDB86135 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDB86135 Rev. C1
www.fairchildsemi.com
2
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TC = 25oC
100
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25oC
-
0.07
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 80V, VGS = 0V
-
-
1
μA
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.0
-
4.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
-
3.0
3.5
m
Ω
gFS
Forward Transconductance
VDS = 10V, ID = 75A
-
167
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
5485
7295
pF
Coss
Output Capacitance
-
2430
3230
pF
Crss
Reverse Transfer Capacitance
-
210
-
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 80V, ID = 75A
VGS = 10V
-
89
116
nC
Qgs
Gate to Source Gate Charge
-
24
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
8
-
nC
Qgd
Gate to Drain “Miller” Charge
-
25
-
nC
td(on)
Turn-On Delay Time
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
-22
54
ns
tr
Turn-On Rise Time
-
54
118
ns
td(off)
Turn-Off Delay Time
-
37
84
ns
tf
Turn-Off Fall Time
-
11
32
ns
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
(Note 2)
-
-
1.25
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 75A, VDD = 80V
dIF/dt = 100A/μs
-72
-
ns
Qrr
Reverse Recovery Charge
-
129
-
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 36.3 A, VDD = 100 V, VGS = 10 V.
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
a)
62.5 °C/W when mounted on
a minimum pad of 2 oz copper
b)


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