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FGH30N120FTDTU Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FGH30N120FTDTU
Description  Field stop trench technology
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGH30N120FTDTU Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH30N120FTD
Rev. A
November 2008
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
± 25
V
IC
Collector Current
@ TC = 25
oC60
A
Collector Current
@ TC = 100
oC30
A
ICM (1)
Pulsed Collector Current
@ TC = 25
oC
90
A
IF
Diode Continuous Forward Current
@ TC = 100
oC
30
A
PD
Maximum Power Dissipation
@ TC = 25
oC339
W
Maximum Power Dissipation
@ TC = 100
oC132
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.38
oC/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.2
oC/W
RθJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
G
E
C
E
C
G
COLLECTOR
(FLANGE)
FGH30N120FTD
1200V, 30A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microwave oven
• Soft switching applications
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.


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