FDMS7580 datasheet(4/7 Pages) FAIRCHILD

Part #	FDMS7580

Description	N-Channel Power Trench MOSFET 25 V, 7.5 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMS7580 Rev.C

Figure 7.

0246

8

10

12

14

0

2

4

6

8

10

ID = 15 A

VDD = 13 V

VDD = 10 V

Qg, GATE CHARGE (nC)

VDD = 16 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

30

20

100

1000

2000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

30

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

Unclamped Inductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

10

20

30

40

50

Limited by Package

RθJC = 4.6

oC/W

VGS = 4.5 V

VGS = 10 V

T

c

, CASE TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11.

0.01

0.1

1

10

100

0.01

0.1

1

10

100

1 s

100 µs

DC

100 ms

10 ms

1 ms

10 s

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Figure 12.

10

-4

10

-3

10

-2

10

-1

110

100

1000

0.5

1

10

100

1000

V

GS = 10 V

t, PULSE WIDTH (sec)

SINGLE PULSE

RθJA = 125

oC/W

TA = 25

oC

Single Pulse Maximum

Power Dissipation

Typical Characteristics T

J = 25 °C unless otherwise noted

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