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NVMFS5826NLT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NVMFS5826NLT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVMFS5826NL http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 200 400 600 800 1000 1200 0 10203040 Figure 7. Capacitance Variation VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V Ciss Coss Crss 0 2 4 6 8 10 02 4 6 8 12 Figure 8. Gate−to−Source Voltage vs. Total Charge Qg, TOTAL GATE CHARGE (nC) VDS = 48 A ID = 10 A TJ = 25°C QT Qgs Qgd 1.0 10 100 1 10 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) VDD = 48 V VGS = 4.5 V ID = 10 A td(off) td(on) tf tr 0 10 20 30 50 0.5 0.6 0.7 0.9 Figure 10. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C 0.1 1 10 1000 0.1 1 10 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 ms 1 ms dc 10 ms 40 100 10 14 16 18 1.0 0.8 60 10 ms 50 60 Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE (°C) 175 125 100 75 50 25 0 5 15 20 10 ID = 20 A 150 |
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