NVMFS5826NLT1G datasheet(4/6 Pages) ONSEMI

Part #	NVMFS5826NLT1G

Description	Power MOSFET 60 V, 24 m, 26 A, Single N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

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NVMFS5826NL

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TYPICAL CHARACTERISTICS

0

200

400

600

800

1000

1200

0

10203040

Figure 7. Capacitance Variation

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

0

2

4

6

8

10

02

4

6

8

12

Figure 8. Gate−to−Source Voltage vs. Total

Charge

Qg, TOTAL GATE CHARGE (nC)

VDS = 48 A

ID = 10 A

TJ = 25°C

QT

Qgs

Qgd

1.0

10

100

1

10

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

VDD = 48 V

VGS = 4.5 V

ID = 10 A

td(off)

td(on)

tf

tr

0

10

20

30

50

0.5

0.6

0.7

0.9

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

0.1

1

10

1000

0.1

1

10

100

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

1 ms

dc

10 ms

40

100

10

14

16

18

1.0

0.8

60

10 ms

50

60

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

175

125

100

75

50

25

0

5

15

20

10

ID = 20 A

150

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