NVMD4N03 datasheet(3/8 Pages) ONSEMI

Part #	NVMD4N03

Description	Power MOSFET 4 A, 30 V, N?묬hannel SO?? Dual

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NTMD4N03, NVMD4N03

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TYPICAL MOSFET ELECTRICAL CHARACTERISTICS

1.5

1.375

0.875

1.125

0.75

100

10

10,000

0

1.0

4

0.2

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

2

0.075

0.05

7

6

5

0.025

0

8

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−50

0

−25

50

25

04

2

15

015

20

10

30

5

2

6

8

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

150

ID = 2 A

VGS = 10 V

0.10

VGS = 3 V

VGS = 10

0.6

5

2

0

1

3

4

7

0.04

0.06

6

5

4

0.02

0

3

0.10

1000

TJ = 25°C

0.4

0.8

10 V

8 V

4 V

3.6 V

3

34

T = 125°C

T = −55°C

T = 25°C

28

7

VGS = 4.5 V

VGS = 10 V

1

100

75

125

1.25

25

VGS = 0 V

TJ = 150°C

TJ = 125°C

4.5 V

5 V

6 V

6

0.08

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