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NVMD4N03 Datasheet(PDF) 6 Page - ON Semiconductor |
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NVMD4N03 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 8 page NTMD4N03, NVMD4N03 http://onsemi.com 6 SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance − General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded, and that the transition time (tr, tf) does not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC). A power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 20 V SINGLE PULSE TC = 25°C 10 0.01 dc 10 ms 1.0 100 100 1.0 ms 0.1 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 80 0 TJ, STARTING JUNCTION TEMPERATURE (°C) 25 125 150 100 75 50 60 ID = 4.45 A 20 40 |
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