NTMD2C02R2G datasheet(3/12 Pages) ONSEMI

Part #	NTMD2C02R2G

Description	Power MOSFET 2 Amps, 20 Volts

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NTMD2C02R2

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ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 2.4 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

−

0.83

0.88

1.1

1.0

Vdc

Reverse Recovery Time

(IF = IS,

dIS/dt = 100 A/ms)

trr

(N)

(P)

−

30

37

−

ns

ta

(N)

(P)

−

15

16

−

tb

(N)

(P)

−

15

21

−

Reverse Recovery Stored Charge

QRR

(N)

(P)

−

0.02

0.025

−

mC

6. Negative signs for P−Channel device omitted for clarity.

7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

N−Channel

P−Channel

Figure 2. On−Region Characteristics

Figure 3. Transfer Characteristics

Figure 4. Transfer Characteristics

2.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

8

6

2

1.75

1.5

1.25

1

0.75

0.5

0.25

0

TJ = 25°C

1.8 V

2.0 V

VGS = 1.5 V

10 V

4

10

4.5 V

3.2 V

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

2.5

2

1.5

1

0.5

12

8

6

4

2

0

VDS ≥ 10 V

TJ = −55°C

25°C

100°C

10

VGS = −1.5 V

VGS = −1.7 V

VGS = −1.9 V

VGS = −10 V

VGS = −4.5 V

VGS = −2.5 V

VGS = −2.1 V

TJ = 25°C

0

4

3

6

2

1

0

8

4

210

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 55°C

TJ = 25°C

TJ = 100°C

VDS ≥ −10 V

1

5

4

1.5

2

3

2

0

3

1

2.5

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

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