NTLUS3A18PZ datasheet(4/6 Pages) ONSEMI

Part #	NTLUS3A18PZ

Description	Power MOSFET ??0 V, ??.2 A, Single P?묬hannel,

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NTLUS3A18PZ

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Threshold Voltage

Figure 12. Single Pulse Maximum Power

Dissipation

TJ, JUNCTION TEMPERATURE (°C)

SINGLE PULSE TIME (s)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Ciss

Coss

Crss

VDS = −15 V

ID = −4.0 A

TJ = 25°C

VDS

VGS

QGS

QGD

VGS = −4.5 V

VDD = −15 V

ID = −4.0 A

td(off)

td(on)

tf

tr

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = −250 mA

QT

0

400

800

1200

1600

2000

2400

2800

3200

3600

4000

0

2

4

6

8

1012

14

16

1820

0

2

4

6

8

10

12

14

16

18

0

1

2

3

4

5

0

5

10

15

20

25

30

1.0

10.0

100.0

1000.0

1

10

100

0.1

1.0

10.0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.15

0.25

0.35

0.45

0.55

0.65

0.75

0.85

0.95

50

25

0

25

50

75

100

125

150

0

25

50

75

100

125

150

175

200

225

100m

10

1000

1m

10m

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