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2N4033 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N4033 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page 2N4029, 2N4033 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −10 mAdc) V(BR)CEO −80 − Vdc Collector−Emitter Cutoff Current (VCE = −60 Vdc) ICES − −25 nAdc Collector−Base Cutoff Current (VCB = −80 Vdc, IE = 0) (VCB = −60 Vdc, IE = 0) ICBO − − −10 −10 mA nA Emitter−Base Cutoff Current (VEB = −5 Vdc) (VEB = −3 Vdc) IEBO − − −10 −25 mA nA ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −0.1 mAdc, VCE = −5 Vdc) (IC = −100 mAdc, VCE = −5 Vdc) (IC = −500 mAdc, VCE = −5 Vdc) (IC = −1 Adc, VCE = −5 Vdc) hFE 50 100 70 25 − 300 − − − Collector−Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) (IC = −1 Adc, IB = −100 mAdc) VCE(sat) − − − −0.15 −0.5 −1.0 Vdc Base −Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −0.9 −1.2 Vdc SMALL−SIGNAL CHARACTERISTICS Magnitude of Small−Signal Current Gain (IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz) |hfe| 1.5 6.0 − Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo − 20 pF Input Capacitance (VEB = −0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo − 80 pF SWITCHING CHARACTERISTICS Delay Time (Reference Figure in MIL−PRF−19500/512) td − 15 ns Rise Time (Reference Figure in MIL−PRF−19500/512) tr − 25 ns Storage Time (Reference Figure in MIL−PRF−19500/512) ts − 175 ns Fall Time (Reference Figure in MIL−PRF−19500/512) tf − 35 ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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