BD159G datasheet(2/3 Pages) ONSEMI

Part #	BD159G

Description	Plastic Medium-PowerSilicon NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BD159G

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)

BVCEO

350

−

Vdc

Collector Cutoff Current (at rated voltage)

ICBO

−

100

mAdc

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

IEBO

−

100

mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)

hFE

30

240

−

25

20

15

10

5.0

0

20

40

60

80

100

120

140

160

Figure 1. Power−Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

1.0

10

Figure 2. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.8

0.6

0.4

0.2

0

20

30

50

100

200 300

500

VBE @ VCE = 10 V

VCE(sat) @ IC/IB = 10

TJ = + 25°C

VBE @ IC/IB = 10

IC/IB = 5.0

1.0

10

Figure 3. DC Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.01

20

30

50

100

300

200

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

0.03

0.02

TJ = 150°C

dc

500

ms

10

ms

1.0 ms

The Safe Operating Area Curves indicate IC − VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To

insure

operation

below,

the

maximum

TJ,

power−temperature derating must be observed for both

steady state and pulse power conditions.

Figure 4. Current Gain

IC, COLLECTOR CURRENT (mAdc)

10

1.0

2.0

3.0

5.0

10

20

30

50

100

200

300

500

300

200

70

30

20

TJ = 150°C

50

100

+ 100

°C

+ 25

°C

- 55

°C

7.0

70

VCE = 10 V

VCE = 2.0 V

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