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SI2315BDS-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2315BDS-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 72014 S-80642-Rev. E, 24-Mar-08 Vishay Siliconix Si2315BDS Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 10 µA - 12 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.90 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 6 A VDS ≤ - 5 V, VGS = - 2.5 V - 3 Drain-Source On Resistancea RDS(on) VGS = - 4.5 V, ID = - 3.85 A 0.040 0.050 Ω VGS = - 2.5 V, ID = - 3.4 A 0.050 0.065 VGS = - 1.8 V, ID = - 2.7 A 0.071 0.100 Forward Transconductancea gfs VDS = - 5 V, ID = - 3.85 A 7S Diode Forward Voltagea VSD IS = - 1.6 A, VGS = 0 V - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 4.5 V ID ≅ - 3.85 A 815 nC Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 2.3 Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 715 pF Output Capacitance Coss 275 Reverse Transfer Capacitance Crss 200 Switchingb Turn-On Time td(on) VDD = - 6 V, RL = 6 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 15 20 ns tr 35 50 Turn-Off Time td(off) 50 70 tf 50 75 |
Similar Part No. - SI2315BDS-T1 |
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