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NDS9957 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDS9957
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS9957 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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February 1996
NDS9957
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
Symbol
Parameter
NDS9957
Units
V
DSS
Drain-Source Voltage
60
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous
(Note 1a)
± 2.6
A
- Pulsed
± 10
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9957.SAM
2.6A, 60V. R
DS(ON) = 0.16@ VGS = 10V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
1
5
6
7
8
4
3
2
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as DC motor control and DC/DC conversion where fast
switching, low in-line power loss, and resistance to transients
are needed.
© 1997 Fairchild Semiconductor Corporation


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