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SIHFR220TR-E3 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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SIHFR220TR-E3 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page www.kersemi.com 2 IRFR220, IRFU220, SiHFR220, SiHFU220 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 3.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 µA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.9 Ab - - 0.80 Ω Forward Transconductance gfs VDS = 50 V, ID = 2.9 Ab 1.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 260 - pF Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss -30 - Total Gate Charge Qg VGS = 10 V ID = 4.8 A, VDS = 160 V, see fig. 6 and 13b -- 14 nC Gate-Source Charge Qgs -- 3.0 Gate-Drain Charge Qgd -- 7.9 Turn-On Delay Time td(on) VDD = 100 V, ID = 4.8 A, RG = 18 Ω, RD = 20 Ω, see fig. 10b -7.2 - ns Rise Time tr -22 - Turn-Off Delay Time td(off) -19 - Fall Time tf -13 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 4.8 A Pulsed Diode Forward Currenta ISM -- 19 Body Diode Voltage VSD TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb - 150 300 ns Body Diode Reverse Recovery Charge Qrr - 0.91 1.8 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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