IRFR3710ZPbF

IRFU3710ZPbF

12/03/04

www.kersemi.com

1

AUTOMOTIVE MOSFET

PD - 95513A

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications and

a wide variety of other applications.

S

D

G

Description

l

Advanced Process Technology

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Ultra Low On-Resistance

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175°C Operating Temperature

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Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

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Lead-Free

Features

D-Pak

IRFR3710Z

I-Pak

IRFU3710Z

Absolute Maximum Ratings

Parameter

Units

A

Pulsed Drain Current

™

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

mJ

Single Pulse Avalanche Energy Tested Value

h

Avalanche Current

Ù

A

Repetitive Avalanche Energy

g

mJ

Operating Junction and

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.05

Junction-to-Ambient (PCB mount)

i

–––

40

°C/W

Junction-to-Ambient

–––

110

200

150

See Fig.12a, 12b, 15, 16

140

0.95

± 20

Max.

56

39

220

42

-55 to + 175

300 (1.6mm from case )

10 lbf

yin (1.1Nym)