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NDS9945 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. NDS9945
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS9945 Datasheet(HTML) 4 Page - Fairchild Semiconductor

   
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NDS9945 Rev.B
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics (continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R
(t) = r(t) * R
R
=135 °C/W
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
g
I
= 3.5A
D
V
= 10V
DS
30V
40V
0.1
0.3
1
3
10
20
50
10
20
50
100
200
400
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0.1
0.2
0.5
1
2
5
10
20
50
100
0.01
0.03
0.1
0.3
1
3
10
30
V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
A
DC
DS
1s
100ms
10ms
1ms
10s
V
=10V
SINGLE PULSE
R
= 135°C/W
T
= 25°C
θJA
GS
A
100us
0.001
0.01
0.1
1
10
100
300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=135°C/W
T = 25°C
θJA
A


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