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MTB50N06VL Datasheet(PDF) 2 Page - Motorola, Inc |
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MTB50N06VL Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 10 page MTB50N06VL 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = .25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 — — 64 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 — 1.4 4.3 2.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 5 Vdc, ID = 21 Adc) RDS(on) — 0.025 0.032 Ohms Drain–to–Source On–Voltage (VGS = 5 Vdc, ID = 42 Adc) (VGS = 5 Vdc, ID = 21 Adc, TJ = 150°C) VDS(on) — — — — 1.6 1.5 Vdc Forward Transconductance (VDS = 6 Vdc, ID = 20 Adc) gFS 17 28 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 1570 2200 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 508 710 Transfer Capacitance f = 1.0 MHz) Crss — 135 270 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 30 Vdc, ID = 42 Adc, VGS = 5 Vdc, RG = 9.1 Ω) td(on) — 16 30 ns Rise Time (VDD = 30 Vdc, ID = 42 Adc, VGS = 5 Vdc, RG = 9.1 Ω) tr — 355 701 Turn–Off Delay Time VGS = 5 Vdc, RG = 9.1 Ω) td(off) — 80 160 Fall Time G = 9.1 Ω) tf — 160 320 Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 42 Adc, VGS = 5 Vdc) QT — 40 60 nC (See Figure 8) (VDS = 48 Vdc, ID = 42 Adc, VGS = 5 Vdc) Q1 — 11 — (VDS = 48 Vdc, ID = 42 Adc, VGS = 5 Vdc) Q2 — 20 — Q3 — 16 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 42 Adc, VGS = 0 Vdc) (IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C) VSD — — 1.03 0.94 2.5 — Vdc Reverse Recovery Time (IS = 42 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 91.1 — ns (IS = 42 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 63.8 — (IS = 42 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 27.3 — Reverse Recovery Stored Charge QRR — 0.299 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 ″ from package to center of die) LD — — 3.5 4.5 — — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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