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IRFB16N60L Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRFB16N60L Datasheet(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
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4 / 7 page  4 IRFB16N60L, SiHFB16N60L Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 10000 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V) 0 5 10 15 20 25 0 10 203040 5060 70 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 480V VDS= 300V VDS= 120V ID= 15A 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 0.10 1.00 10.00 100.00 TJ = 25°C TJ = 150°C VGS = 0V www.kersemi.com |
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