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IRFB13N50A Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd.

Part No. IRFB13N50A
Description  Power MOSFET
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Maker  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFB13N50A Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRFB13N50A, SiHFB13N50A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-62
°C/W
Case-to-Sink, Flat, Greasd Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-0.50
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.55
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 8.4 Ab
-
-
0.450
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 8.4 A
8.1
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1910
-
pF
Output Capacitance
Coss
-
290
-
Reverse Transfer Capacitance
Crss
-11
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
-
2730
-
VDS = 400 V, f = 1.0 MHz
-
82
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 400 Vc
-
160
-
Total Gate Charge
Qg
VGS = 10 V
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
--
81
nC
Gate-Source Charge
Qgs
--
20
Gate-Drain Charge
Qgd
--
36
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 14 A,
RG = 7.5 Ω,
see fig. 10b
-15
-
ns
Rise Time
tr
-39
-
Turn-Off Delay Time
td(off)
-39
-
Fall Time
tf
-31
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
14
A
Pulsed Diode Forward Currenta
ISM
--
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
--
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 14 A,
TJ = 125 °C, dI/dt = 100 A/µsb
-
370
550
ns
Body Diode Reverse Recovery Charge
Qrr
-4.4
6.5
µC
Body Diode Reverse Recovery Current
IRRM
-21
31
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
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