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IRFB13N50A Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Part No. IRFB13N50A
Description  Power MOSFET
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Maker  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFB13N50A Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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1
Power MOSFET
IRFB13N50A, SiHFB13N50A
FEATURES
• Lower Gate Charge Qg Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. ISD ≤ 14 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)VGS = 10 V
0.450
Qg (Max.) (nC)
81
Qgs (nC)
20
Qgd (nC)
36
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRFB13N50APbF
SiHFB13N50A-E3
SnPb
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
14
A
TC = 100 °C
9.1
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
2.0
W/°C
Single Pulse Avalanche Energyb
EAS
560
mJ
Avalanche Currenta
IAR
14
A
Repetitive Avalanche Energya
EAR
25
mJ
Maximum Power Dissipation
TC = 25 °C
PD
250
W
Peak Diode Recovery dV/dtc
dV/dt
9.2
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
www.kersemi.com


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