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NDS9936 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDS9936
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS9936 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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February 1996
NDS9936
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
NDS9936
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous @ T
A = 25°C
(Note 1a)
± 5.0
A
- Continuous @ T
A = 70°C
(Note 1a)
± 4.0
- Pulsed
@ T
A = 25°C
± 40
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9936.SAM
5A, 30V. R
DS(ON) = 0.05@ VGS = 10V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC/DC conversion,
disk drive motor control, and other battery powered circuits
where fast switching, low in-line power loss, and resistance to
transients are needed.
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© 1997 Fairchild Semiconductor Corporation


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