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NDS9400A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. NDS9400A
Description  Single P-Channel Enhancement Mode Field Effect Transistor
Download  10 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS9400A Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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Electrical Characteristics (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = -250 µA
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS = -24 V, VGS = 0 V
-2
µA
T
J = 55°C
-25
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = -250 µA
-1
-1.6
-2.8
V
T
J = 125°C
-0.85
-1.25
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = -10 V, ID = -1.0 A
0.11
0.13
T
J = 125°C
0.15
0.21
V
GS = -4.5 V, ID = -0.5 A
0.17
0.2
T
J = 125°C
0.24
0.32
I
D(on)
On-State Drain Current
V
GS = -10 V, VDS = -5 V
-10
A
g
FS
Forward Transconductance
V
DS = -15 V, ID = -3.4 A
4
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = -10 V, VGS = 0 V,
f = 1.0 MHz
350
pF
C
oss
Output Capacitance
260
pF
C
rss
Reverse Transfer Capacitance
100
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD = -10 V, ID = -1 A,
V
GEN = -10 V, RGEN = 6
9
40
ns
t
r
Turn - On Rise Time
21
40
ns
t
D(off)
Turn - Off Delay Time
21
90
ns
t
f
Turn - Off Fall Time
8
50
ns
Q
g
Total Gate Charge
V
DS = -10 V,
I
D = -3.4 A, VGS = -10 V
10
25
nC
Q
gs
Gate-Source Charge
1.6
nC
Q
gd
Gate-Drain Charge
3.4
nC
NDS9400A.SAM


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