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NDS9400A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDS9400A
Description  Single P-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS9400A Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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February 1996
NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A= 25°C unless otherwise noted
Symbol
Parameter
NDS9400A
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous
(Note 1a)
± 3.4
A
- Pulsed
± 10
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
NDS9400A.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
1
5
6
7
8
4
3
2
-3.4A, -30V. R
DS(ON) = 0.13@ VGS = -10V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
© 1997 Fairchild Semiconductor Corporation


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