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SIHFR9014TA Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFR9014TA Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page www.kersemi.com 1 Power MOSFET IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014/SiHFR9014) • Straight Lead (IRFU9014/SiHFU9014) • Available in Tape and Reel • P-Channel • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 6.3 mH, RG = 25 Ω, IAS = - 5.1 A (see fig. 12). c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9014PbF IRFR9014TRLPbFa IRFR9014TRPbFa IRFU9014PbF SiHFR9014-E3 SiHFR9014TL-E3a SiHFR9014T-E3a SiHFU9014-E3 SnPb IRFR9014 IRFR9014TRLa IRFR9014TRa IRFU9014 SiHFR9014 SiHFR9014TLa SiHFR9014Ta SiHFU9014 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 5.0 V TC = 25 °C ID - 5.1 A TC = 100 °C - 3.2 Pulsed Drain Currenta IDM - 20 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR - 5.1 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d |
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