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1

Power MOSFET

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR9014/SiHFR9014)

• Straight Lead (IRFU9014/SiHFU9014)

• Available in Tape and Reel

• P-Channel

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

- 60

0.50

12

3.8

5.1

Configuration

Single

S

G

D

P-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR9014PbF

IRFU9014PbF

SiHFR9014-E3

SiHFU9014-E3

SnPb

IRFR9014

IRFU9014

SiHFR9014

SiHFU9014

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 60

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 5.1

A

- 3.2

- 20

Linear Derating Factor

0.20

W/°C

0.020

140

mJ

- 5.1

A

2.5

mJ

Maximum Power Dissipation

25

W

2.5

dV/dt

- 4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s