PSMN1R6-30PL_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 25 June 2009

4 of 13

NXP Semiconductors

PSMN1R6-30PL

N-channel 30 V 1.7 m

Ω logic level MOSFET

5.

Thermal characteristics

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aad115

1

10

10

2

10

3

10

4

10

-1

1

10

10

2

(A)

DC

(1)

100 ms

10 ms

1 ms

100

μs

10

μs

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting

base

see Figure 4

-

0.22

0.49

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration; typical

values

003aad005

10

-4

10

-3

10

-2

10

-1

1

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

1

(K/W)

single shot

0.02

0.05

0.1

0.2

δ = 0.5

T

P

t

T

δ =