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PBHV8115T Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBHV8115T Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified I Small SMD plastic package 1.3 Applications I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch Mode Power Supply (SMPS) 1.4 Quick reference data PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 December 2008 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 1 A hFE DC current gain VCE =10V; IC =50mA 100 250 - |
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Similar Description - PBHV8115T |
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