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NDS8425 Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part No. NDS8425
Description  Single N-Channel Enhancement Mode Field Effect Transistor
Download  10 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS8425 Datasheet(HTML) 6 Page - Fairchild Semiconductor

 
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NDS8425 Rev. C
0
5
10
15
20
25
0
10
20
30
40
50
I , DRAIN CURRENT (A)
T = -55°C
J
25°C
D
V
= 5V
DS
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 16. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics (continued)
0
0.2
0.4
0.6
0.8
1
4
5
6
7
8
2oz COPPER MOUNTING PAD AREA (in )
2
1b
1c
4.5"x5" FR-4 Board
T = 25 C
Still Air
V
= 4.5V
A
o
GS
1a
0
0.2
0.4
0.6
0.8
1
0.5
1
1.5
2
2.5
2oz COPPER MOUNTING PAD AREA (in
)
2
1c
1b
1a
4.5"x5" FR-4 Board
T
= 25 C
Still Air
A
o
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.1
0.5
1
2
5
10
20
50
V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
A
DC
DS
1s
100ms
10ms
1ms
10s
V
= 4.5V
SINGLE PULSE
R
= See Note 1c
T
= 25°C
θJA
GS
A
Figure 14. SO-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0 .0001
0 .001
0 .01
0 .1
1
10
100
300
0 .001
0 .002
0 .005
0 .01
0 .02
0 .05
0 .1
0 .2
0 .5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t
/ t
1
2
R
(t) = r(t) * R
R
= See Note 1c
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2


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