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NDS8410S Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. NDS8410S
Description  Single N-Channel Enhancement Mode Field Effect Transistor
Download  10 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS8410S Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS = 24 V, VGS = 0 V
1
µA
T
J= 55°C
10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
2
2.2
4
V
T
J= 125°C
1.4
1.6
2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 10 V, ID = 8.6 A
0.015
0.02
T
J= 125°C
0.021
0.036
I
D(on)
On-State Drain Current
V
GS = 10 V, VDS = 5 V
30
A
g
FS
Forward Transconductance
V
DS = 10 V, ID = 8.6 A
15
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 15 V, VGS = 0 V,
f = 1.0 MHz
1105
pF
C
oss
Output Capacitance
790
pF
C
rss
Reverse Transfer Capacitance
295
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD = 10 V, ID = 1 A,
V
GEN = 10 V, RGEN = 6
11
25
ns
t
r
Turn - On Rise Time
15
30
ns
t
D(off)
Turn - Off Delay Time
30
60
ns
t
f
Turn - Off Fall Time
20
40
ns
Q
g
Total Gate Charge
V
DS = 10 V,
I
D = 8.6 A, VGS = 10 V
33
46
nC
Q
gs
Gate-Source Charge
6.5
nC
Q
gd
Gate-Drain Charge
9
nC
NDS8410S Rev.C


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