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NDS8410S Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDS8410S
Description  Single N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDS8410S Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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February 1997
NDS8410S
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS T
A = 25°C unless otherwise noted
Symbol
Parameter
NDS8410S
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
8.6
A
- Pulsed
30
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
NDS8410S Rev.C
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
8.6 A, 30 V. R
DS(ON) = 0.02
@ V
GS = 10 V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
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© 1997 Fairchild Semiconductor Corporation


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