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SGW15N120FKSA1 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SGW15N120FKSA1
Description  Fast IGBT in NPT-technology
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGW15N120FKSA1 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SGP15N120
SGW15N120
Power Semiconductors
3
Rev. 2.6
Nov. 09
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
18
24
Rise time
tr
-
23
30
Turn-off delay time
td(off)
-
580
750
Fall time
tf
-
22
29
ns
Turn-on energy
Eon
-
1.1
1.5
Turn-off energy
Eoff
-
0.8
1.1
Total switching energy
Ets
Tj=25°C,
VCC=800V,IC=15A,
VGE=15V/0V,
RG=33Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.9
2.6
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
38
46
Rise time
tr
-
30
36
Turn-off delay time
td(off)
-
652
780
Fall time
tf
-
31
37
ns
Turn-on energy
Eon
-
1.9
2.3
Turn-off energy
Eoff
-
1.5
2.0
Total switching energy
Ets
Tj=150°C
VCC=800V,
IC=15A,
VGE=15V/0V,
RG=33Ω,
Lσ
1) =180nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
3.4
4.3
mJ
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.


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