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SGW15N120FKSA1 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SGW15N120FKSA1 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 12 page SGP15N120 SGW15N120 Power Semiconductors 3 Rev. 2.6 Nov. 09 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 18 24 Rise time tr - 23 30 Turn-off delay time td(off) - 580 750 Fall time tf - 22 29 ns Turn-on energy Eon - 1.1 1.5 Turn-off energy Eoff - 0.8 1.1 Total switching energy Ets Tj=25°C, VCC=800V,IC=15A, VGE=15V/0V, RG=33Ω, Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 1.9 2.6 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 38 46 Rise time tr - 30 36 Turn-off delay time td(off) - 652 780 Fall time tf - 31 37 ns Turn-on energy Eon - 1.9 2.3 Turn-off energy Eoff - 1.5 2.0 Total switching energy Ets Tj=150°C VCC=800V, IC=15A, VGE=15V/0V, RG=33Ω, Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 3.4 4.3 mJ 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. |
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