BC818K-16W datasheet(3/11 Pages) INFINEON

Part #	BC818K-16W

Description	NPN Silicon AF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 11 page

2011-09-19

3

BC817K.../BC818K...

Electrical Characteristics

at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC817...

IC = 10 mA, IB = 0 , BC818...

V(BR)CEO

45

25

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC817...

IC = 10 µA, IE = 0 , BC818...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

V

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

50

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain1)

IC = 100 mA, VCE = 1 V, hFE-grp.16

IC = 100 mA, VCE = 1 V, hFE-grp.25

IC = 100 mA, VCE = 1 V, hFE-grp.40

IC = 500 mA, VCE = 1 V, all hFE-grps.

hFE

100

160

250

40

160

250

350

-

250

400

630

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VBEsat

-

1.2

1Pulse test: t < 300µs; D < 2%

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BC818K-16W Datasheet(PDF) 3 Page - Infineon Technologies AG

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