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NDP710A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. NDP710A
Description  N-Channel Enhancement Mode Field Effect Transistor
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDP710A Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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Electrical Characteristics (T
C = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
V
DD = 25 V, ID = 42 A
NDP710AE
NDP710BE
NDB710AE
NDB710BE
700
mJ
I
AR
Maximum Drain-Source Avalanche Current
42
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS = 0 V, ID = 250 µA
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS = 100 V,
V
GS = 0 V
ALL
250
µA
T
J = 125°C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
ALL
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS = 0 V
ALL
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS,
I
D = 250 µA
ALL
2
2.9
4
V
T
J = 125°C
1.4
2.2
3.6
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS = 10 V,
I
D = 21 A
NDP710A
NDP710AE
NDB710A
NDB710AE
0.026
0.038
T
J = 125°C
0.044
0.08
V
GS = 10 V,
I
D = 20 A
NDP710B
NDP710BE
NDB710B
NDB710BE
0.042
T
J = 125°C
0.09
I
D(on)
On-State Drain Current
V
GS = 10 V, VDS = 10 V
NDP710A
NDP710AE
NDB710A
NDB710AE
42
A
NDP710B
NDP710BE
NDB710B
NDB710BE
40
A
g
FS
Forward Transconductance
V
DS = 10 V, ID = 21 A
ALL
20
28
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 25 V, VGS = 0 V,
f = 1.0 MHz
ALL
2840
3600
pF
C
oss
Output Capacitance
ALL
550
700
pF
C
rss
Reverse Transfer Capacitance
ALL
175
200
pF
NDP710.SAM


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