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NDP710A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDP710A
Description  N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDP710A Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE
NDB710A / NDB710AE / NDB710B / NDB710BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C = 25°C unless otherwise noted
Symbol Parameter
NDP710A NDP710AE
NDB710A NDB710AE
NDP710B NDP710BE
NDB710B NDB710BE
Units
V
DSS
Drain-Source Voltage
100
V
V
DGR
Drain-Gate Voltage (R
GS < 1 MΩ)
100
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Nonrepetitive (t
P < 50 µs)
±40
V
I
D
Drain Current - Continuous
42
40
A
- Pulsed
168
160
A
P
D
Total Power Dissipation @ T
C = 25°C
150
W
Derate above 25°C
1
W/°C
T
J,TSTG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
°C
NDP710.SAM
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
42 and 40A, 100V. R
DS(ON) = 0.038 and 0.042Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON).
TO-220 and TO-263 (D
2PAK) package for both
through hole and surface mount applications.
D
G
S
© 1997 Fairchild Semiconductor Corporation


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