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RMLV0414EGSB-4S2 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RMLV0414EGSB-4S2
Description  4Mb Advanced LPSRAM
Download  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RMLV0414EGSB-4S2 Datasheet(HTML) 5 Page - Renesas Technology Corp

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RMLV0408E Series
Preliminary
R10DS0217EJ0001 Rev.0.01
Page 5 of 10
2013.09.10
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C)
 Input pulse levels: VIL = 0.4V, VIH = 2.4V
 Input rise and fall time: 5ns
 Input and output timing reference level: 1.4V
 Output load: See figures (Including scope and jig)
Read Cycle
Parameter
Symbol
RMLV0408EG**-4S2
RMLV0408EG**-5S2
Unit
Note
Min.
Max.
Min.
Max.
Read cycle time
tRC
45
55
ns
Address access time
tAA
45
55
ns
Chip select access time
tACS
45
55
ns
Output enable to output valid
tOE
22
30
ns
Output hold from address change
tOH
10
10
ns
Chip select to output in low-Z
tCLZ
10
10
ns
7,8
Output enable to output in low-Z
tOLZ
5
5
ns
7,8
Chip deselect to output in high-Z
tCHZ
0
18
0
20
ns
7,8,9
Output disable to output in high-Z
tOHZ
0
18
0
20
ns
7,8,9
Write Cycle
Parameter
Symbol
RMLV0408EG**-4S2
RMLV0408EG**-5S2
Unit
Note
Min.
Max.
Min.
Max.
Write cycle time
tWC
45
55
ns
Address valid to write end
tAW
35
50
ns
Chip select to write end
tCW
35
50
ns
Write pulse width
tWP
35
40
ns
10
Address setup time to write start
tAS
0
0
ns
Write recovery time from write end
tWR
0
0
ns
Data to write time overlap
tDW
25
25
ns
Data hold from write end
tDH
0
0
ns
Output enable from write end
tOW
5
5
ns
7
Output disable to output in high-Z
tOHZ
0
18
0
20
ns
7,9
Write to output in high-Z
tWHZ
0
18
0
20
ns
7,9
Note
7. This parameter is sampled and not 100% tested.
8. At any given temperature and voltage condition, tCHZ max is less than tCLZ min, and tOHZ max is less than tOLZ
min, for any device.
9.
tCHZ, tOHZ and tWHZ are defined as the time when the I/O pins enter a high-impedance state and are not
referred to the I/O levels.
10. tWP is the interval between write start and write end.
A write starts when both of CS# and WE# become active
A write is performed during the overlap of a low CS#, a low WE#
A write ends when any of CS#, WE# becomes inactive.
I/O
1.4V
RL = 500 ohm
CL = 30 pF (-4S2)
CL = 50 pF (-5S2)


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