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NDP6060 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDP6060
Description  N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDP6060 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C = 25°C unless otherwise noted
Symbol
Parameter
NDP6060
NDB6060
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS < 1 M)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P < 50 µs)
± 40
I
D
Drain Current
- Continuous
T
c=25
oC
48
A
- Continuous
T
C=100
oC
32
- Pulsed
144
P
D
Total Power Dissipation @ T
C = 25°C
100
W
Derate above 25°C
0.67
W/°C
T
J,TSTG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
NDP6060 Rev. B1 / NDB6060 Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
48A, 60V. R
DS(ON) = 0.025@ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON).
TO-220 and TO-263 (D
2PAK) package for both through hole
and surface mount applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation


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