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NDP6060 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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NDP6060 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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Electrical Characteristics (T C = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS I S Maximum Continuos Drain-Source Diode Forward Current 48 A I SM Maximum Pulsed Drain-Source Diode Forward Current 144 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 24 A (Note 1) 0.9 1.3 V T J = 125°C 0.8 1.2 t rr Reverse Recovery Time V GS = 0 V, IF = 48 A, dI F/dt = 100 A/µs 35 87 140 ns I rr Reverse Recovery Current 2 3.6 8 A THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6060 Rev. B1 / NDB6060 Rev. C |
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