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NDP6051 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NDP6051
Description  N-Channel Enhancement Mode Field Effect Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDP6051 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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May 1996
NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
______________________________________________________________________________
Absolute Maximum Ratings
T
C = 25°C unless otherwise noted
Symbol
Parameter
NDP6051
NDB6051
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS < 1 M)
50
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P < 50 µs)
± 40
I
D
Drain Current
- Continuous
48
A
- Pulsed
144
P
D
Total Power Dissipation @ T
C = 25°C
100
W
Derate above 25°C
0.67
W/°C
T
J,TSTG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
NDP6051 Rev. C1
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These
devices
are
particularly
suited
for
low
voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
48 A, 50 V. R
DS(ON) = 0.022 @ VGS= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON).
TO-220 and TO-263 (D
2PAK) package for both through hole
and surface mount applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation


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