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3N100E Datasheet(PDF) 6 Page - Motorola, Inc |
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3N100E Datasheet(HTML) 6 Page - Motorola, Inc |
6 / 10 page MTB3N100E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 15. D2PAK Power Derating Curve RθJA = 50°C/W Board material = 0.065 mil FR–4 Mounted on the minimum recommended footprint Collector/Drain Pad Size ≈ 450 mils x 350 mils 0.1 1.0 1000 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 100 10 10 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 t, TIME (ms) Figure 13. Thermal Response R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 25 150 0 1.0E–05 1.0E–04 1.0E–02 0.1 1.0 0.01 1.0E–03 1.0E–01 1.0E+00 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 1.0E+01 250 VGS = 20 V SINGLE PULSE TC = 25°C 50 100 125 75 50 200 150 100 ID = 3 A 1.0 dc 100 µs 10 µs 1 ms 10 ms |
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