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NDP410B Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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NDP410B Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 6 page NDP410.SAM 0 2 4 6 8 10 0 2 4 6 8 I , DRAIN CURRENT (A) T = -55°C J 25°C D 125°C V = 10V DS t p t p V = 10V GS L + - VDD VDD BVDSS I L t is adjusted to reach the desired peak inductive current, I . p L 1 2 3 5 10 20 50 100 150 0.5 1 2 5 10 50 V , DRAIN-SOURCE VOLTAGE (V) DS V = 20V SINGLE PULSE T = 25°C GS C RDS(ON) Li mit 100µs 1ms 10ms DC 10µs Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. Figure 15. Maximum Safe Operating Area. Figure 16. Transient Thermal Response Curve. Typical Electrical Characteristics (continued) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,TIME (ms) Single Pulse D = 0.5 0.1 0.05 0.02 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 3.0 °C/W θJC θJC θJC T - T = P * R (t) θJC C J P(pk) t1 t 2 1 0.01 |
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Similar Description - NDP410B |
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