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NDP4060 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. NDP4060
Description  N-Channel Enhancement Mode Field Effect Transistor
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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NDP4060 Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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Electrical Characteristics (T
C = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD = 25 V, ID = 15 A
40
mJ
I
AR
Maximum Drain-Source Avalanche Current
15
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS = 60 V, VGS = 0 V
250
µA
T
J = 125°C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
2
3
4
V
T
J = 125°C
1.4
2.4
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 10 V, ID = 7.5 A
0.078
0.1
T
J = 125°C
0.12
0.165
I
D(on)
On-State Drain Current
V
GS = 10 V, VDS = 10 V
15
A
g
FS
Forward Transconductance
V
DS = 10 V, ID = 7.5 A
3
5.7
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 25, VGS = 0 V,
f = 1.0 MHz
370
450
pF
C
oss
Output Capacitance
165
200
pF
C
rss
Reverse Transfer Capacitance
50
100
pF
SWITCHING CHARACTERISTICS (Note 1)
t
D(on)
Turn - On Delay Time
V
DD = 30 V, ID = 15 A
V
GS = 10 V, RGEN = 25
8
20
ns
t
r
Turn - On Rise Time
70
100
ns
t
D(off)
Turn - Off Delay Time
18
30
ns
t
f
Turn - Off Fall Time
37
50
ns
Q
g
Total Gate Charge
V
DS = 48 V
I
D = 15 A, VGS = 10 V
12.7
17
nC
Q
gs
Gate-Source Charge
3.2
nC
Q
gd
Gate-Drain Charge
7
nC
NDP4060 Rev. C


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